The Resistance Of A Forward-biased p-n junction Is :

Why Kaysons ?

Video lectures

Access over 500+ hours of video lectures 24*7, covering complete syllabus for JEE preparation.

Online Support

Practice over 30000+ questions starting from basic level to JEE advance level.

Live Doubt Clearing Session

Ask your doubts live everyday Join our live doubt clearing session conducted by our experts.

National Mock Tests

Give tests to analyze your progress and evaluate where you stand in terms of your JEE preparation.

Organized Learning

Proper planning to complete syllabus is the key to get a decent rank in JEE.

Test Series/Daily assignments

Give tests to analyze your progress and evaluate where you stand in terms of your JEE preparation.

SPEAK TO COUNSELLOR ? CLICK HERE

Question

The resistance of a forward-biased p-n junction is :

Solution

Correct option is

A few ohms

A few ohms

Testing

SIMILAR QUESTIONS

Q1

When npn transistor is used as an amplifier

Q2

When a pn junction is reverse biased, the flow of current across the junction is mainly due to

Q3

The V-i characteristic of a silicon diode is given in the figure. Calculate the diode resistance in forward bias at V = +2 volt.  

Q4

A forward-biased p-n junction diode has a potential drop of 0.5 V which is assumed to be independent of current. The current in excess of 10 mA through the diode produces so much heating that burns the diode. If we have a 1.5 V battery to bias the diode, resistor must be used in series with the diode so that the maximum current does not exceed 5 mA?   

Q5

A Si diode (p-junction) is connected to a resistor R and a biasing battery of variable voltage VB. Assume that diode requires a maximum current of 1 mA to be above the knee point (0.7 V) of its V-i characteristic curve. Also assume that the voltage V across the diode is independent of current above the knee point. If VB = 5 V, what should be the maximum value of R so that the voltage V is above the knee-point voltage?   

                                                                  

Q6

In the circuit (a), calculate the current in the  resistance. Assume that each diode is of silicon (Si) and its potential barrier is 0.7 volt, and forward-resistance is .

Q7

p-n photodiode is fabricated from a semiconductor with a band gap of 2.8 eV. Can it detect a wavelength of 6000 nm?

  .

Q8

The depletion layer in the p-n junction is formed by

Q9

When a forward bias is applied to a p-n junction, it :

Q10

When a semiconductor device is connected with a battery and a resistance in series, a current flows in the circuit. The current almost vanishes if the polarity of the battery is reversed. The device may be :