## Question

### Solution

Correct option is

p-n junction

p-n junction

#### SIMILAR QUESTIONS

Q1

When a pn junction is reverse biased, the flow of current across the junction is mainly due to

Q2

The V-i characteristic of a silicon diode is given in the figure. Calculate the diode resistance in forward bias at V = +2 volt.

Q3

A forward-biased p-n junction diode has a potential drop of 0.5 V which is assumed to be independent of current. The current in excess of 10 mA through the diode produces so much heating that burns the diode. If we have a 1.5 V battery to bias the diode, resistor must be used in series with the diode so that the maximum current does not exceed 5 mA?

Q4

A Si diode (p-junction) is connected to a resistor R and a biasing battery of variable voltage VB. Assume that diode requires a maximum current of 1 mA to be above the knee point (0.7 V) of its V-i characteristic curve. Also assume that the voltage V across the diode is independent of current above the knee point. If VB = 5 V, what should be the maximum value of R so that the voltage V is above the knee-point voltage?

Q5

In the circuit (a), calculate the current in the  resistance. Assume that each diode is of silicon (Si) and its potential barrier is 0.7 volt, and forward-resistance is .

Q6

p-n photodiode is fabricated from a semiconductor with a band gap of 2.8 eV. Can it detect a wavelength of 6000 nm?

.

Q7

The depletion layer in the p-n junction is formed by

Q8

When a forward bias is applied to a p-n junction, it :

Q9

The resistance of a forward-biased p-n junction is :

Q10

The circuit contains two diodes, each with a forward resistance of  and with infinite backward resistance. If the battery voltage is 6 V, the current through the  resistance is