Question

Solution

Correct option is

Circuits 2 and 3

In circuit 2, both p-n junctions are forward biased; in circuit 3, both are reverse-biased. In circuit 1, one junction is forward-biased while the other is reverse-biased.

SIMILAR QUESTIONS

Q1

A forward-biased p-n junction diode has a potential drop of 0.5 V which is assumed to be independent of current. The current in excess of 10 mA through the diode produces so much heating that burns the diode. If we have a 1.5 V battery to bias the diode, resistor must be used in series with the diode so that the maximum current does not exceed 5 mA?

Q2

A Si diode (p-junction) is connected to a resistor R and a biasing battery of variable voltage VB. Assume that diode requires a maximum current of 1 mA to be above the knee point (0.7 V) of its V-i characteristic curve. Also assume that the voltage V across the diode is independent of current above the knee point. If VB = 5 V, what should be the maximum value of R so that the voltage V is above the knee-point voltage? Q3

In the circuit (a), calculate the current in the resistance. Assume that each diode is of silicon (Si) and its potential barrier is 0.7 volt, and forward-resistance is . Q4

p-n photodiode is fabricated from a semiconductor with a band gap of 2.8 eV. Can it detect a wavelength of 6000 nm? .

Q5

The depletion layer in the p-n junction is formed by

Q6

When a forward bias is applied to a p-n junction, it :

Q7

The resistance of a forward-biased p-n junction is :

Q8

When a semiconductor device is connected with a battery and a resistance in series, a current flows in the circuit. The current almost vanishes if the polarity of the battery is reversed. The device may be :

Q9

The circuit contains two diodes, each with a forward resistance of and with infinite backward resistance. If the battery voltage is 6 V, the current through the resistance is Q10

In case of p-n junction diode at high reverse-bias, the current rises sharply. The value of reverse bias is known as :