Diamond, silicon and germanium each are characterised  by valence and conduction bands separated by energy band gaps respectively equal to . Which of the following statements is true?


Correct option is

The energy band gap for diamond (C) is 7 eV, for silicon (Si) is 1.1 eV and for germanium (Ge) is 0.7 eV.



Transistors are :


Which one of following gates can be served as a building block for any digital circuit? 


The decreasing order of band gap energy is :


In the case of constants  of a transistor :


An ac voltage of peak value of 20 V is connected in series with a silicon diode and a load resistance of . The forward resistance of the diode is  and the barrier voltage is 0.7 V. Find the peak current through diode and the peak voltage across the load. What will happen to these values if the diode is assumed to be ideal?   


A transistor is connected in common emitter (CE) configuration. The collector supply is 8 V and the voltage drop across a resistor of  in the collector circuit is 0.5 V. If the current gain factor  is 0.96, find the base current.  


The plate current Ip, in triode value is give by 


Where Ip is in milliampere and Vp and Vg are in volt. Calculate the value ofk and the grid cut-off voltage. Given, 

 milliampere are 


A semiconductor has an electron concentration of  and a hole concentration of . Calculate its conductivity. Given electron mobility = 0.135 m2V–1s–1; hole mobility = 0.048 m2V–1s–1.


The electric conductivity of a semiconductor increases when electromagnetic radiation of wavelength shorter than 2480 nm is incident on it. Find the hand gap of the semiconductor. Given, 




The input resistance of a common-emitter amplifier is  and a-c current gain is 20. If the load resistor used is , calculate transconductance of the transistor used.