Question

The plate current Ip, in triode value is give by 

         

Where Ip is in milliampere and Vp and Vg are in volt. Calculate the value ofk and the grid cut-off voltage. Given, 

 milliampere are 

Solution

Correct option is

– 6 volt

          

  

      

         

         = 50 

    

     

Differentiating equation (i) write respect to  constant, we get 

        

    

Dividing equation (ii) by equation (iii), we get 

       

  

      

              = –180 

           

Substituting the value of  in equation (ii), we get 

      

                         

      

             

     

                                  .

SIMILAR QUESTIONS

Q1

A transistor has three impurity regions. All the three regions have different doping levels. In order of increasing doping level, the regions are :

Q2

When the emitter current of a transistor is changed by 1 mA, its collector current of a transistor is changed by 0.990 mA. The common base circuit current gain for the transistor is :

Q3

In case of n-p-n transistor the collector current is always less than the emitter current because :

Q4

Transistors are :

Q5

Which one of following gates can be served as a building block for any digital circuit? 

Q6

The decreasing order of band gap energy is :

Q7

In the case of constants  of a transistor :

Q8

An ac voltage of peak value of 20 V is connected in series with a silicon diode and a load resistance of . The forward resistance of the diode is  and the barrier voltage is 0.7 V. Find the peak current through diode and the peak voltage across the load. What will happen to these values if the diode is assumed to be ideal?   

Q9

A transistor is connected in common emitter (CE) configuration. The collector supply is 8 V and the voltage drop across a resistor of  in the collector circuit is 0.5 V. If the current gain factor  is 0.96, find the base current.  

Q10

A semiconductor has an electron concentration of  and a hole concentration of . Calculate its conductivity. Given electron mobility = 0.135 m2V–1s–1; hole mobility = 0.048 m2V–1s–1.